An Extremely Low Sub-Threshold Swing UTB SOI Tunnel-FET Structure Suitable for Low-Power Applications
نویسندگان
چکیده
منابع مشابه
Characterization of Tunnel Fet for Ultra Low Power Analog Applications
In modern portable devices, the supply voltage is decreased to reduce the power dissipation. However as the supply voltage is scaled down below 0.4V, the normal MOSFET devices cannot be used due to lower ION/ IOFF ratio which will reduce the static power dissipation. Hence for low power applications, Tunnel FET is used as alternatives due to their higher sub threshold swing, extremely low off s...
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ژورنال
عنوان ژورنال: International Journal of Applied Physics and Mathematics
سال: 2012
ISSN: 2010-362X
DOI: 10.7763/ijapm.2012.v2.101